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M58BW016FT70T3FT PDF预览

M58BW016FT70T3FT

更新时间: 2024-11-19 03:29:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
69页 630K
描述
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

M58BW016FT70T3FT 数据手册

 浏览型号M58BW016FT70T3FT的Datasheet PDF文件第2页浏览型号M58BW016FT70T3FT的Datasheet PDF文件第3页浏览型号M58BW016FT70T3FT的Datasheet PDF文件第4页浏览型号M58BW016FT70T3FT的Datasheet PDF文件第5页浏览型号M58BW016FT70T3FT的Datasheet PDF文件第6页浏览型号M58BW016FT70T3FT的Datasheet PDF文件第7页 
M58BW016DB M58BW016DT  
M58BW016FT M58BW016FB  
16 Mbit (512 Kb x 32, boot block, burst)  
3 V supply Flash memories  
Features  
Supply voltage  
– V = 2.7 V to 3.6 V for Program, Erase  
DD  
and Read  
– V  
= V  
= 2.4 V to 3.6 V for I/O  
DDQIN  
DDQ  
buffers  
– V = 12 V for Fast Program (optional)  
PP  
High performance  
– Access times: 70, 80 ns  
PQFP80 (T)  
– 56 MHz effective zero wait-state Burst  
Read  
– Synchronous Burst Read  
– Asynchronous Page Read  
Hardware block protection  
BGA  
– WP pin for Write Protect of the 4 outermost  
parameter blocks and all main blocks  
– RP pin for Write Protect of all blocks  
LBGA80 10 × 12 mm  
Optimized for FDI drivers  
– Fast Program / Erase Suspend latency  
time < 6 µs  
– Common Flash interface  
Memory blocks  
– 8 parameters blocks (top or bottom)  
– 31 main blocks  
Low power consumption  
– 5 µA typical Deep Power-down  
– 60 µA typical standby for M58BW016DT/B  
150 µA typical standby for M58BW016FT/B  
– Automatic standby after Asynchronous  
Read  
Electronic signature  
– Manufacturer code: 20h  
Top device code: 8836h  
– Bottom device code: 8835h  
®
ECOPACK packages available  
October 2007  
Rev 14  
1/69  
www.st.com  
1

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