Datasheet > M58BW016FT8ZA3FF

M58BW016FT8ZA3FF

更新时间： 2024-11-19 03:29:15

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存内存集成电路
页数	文件大小	规格书
70页	1354K
描述
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

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数据手册

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M58BW016FT8ZA3FF 数据手册

M58BW016DB M58BW016DT

M58BW016FT M58BW016FB

16 Mbit (512 Kbit x 32, boot block, burst)

3 V supply Flash memories

Features

■ Supply voltage

– V = 2.7 V to 3.6 V for program, erase

and read

– V

= V

= 2.4 V to 3.6 V for I/O

DDQIN

DDQ

buffers

– V = 12 V for fast program (optional)

■ High performance

– Access times: 70, 80 ns

– 56 MHz effective zero wait-state burst read

– Synchronous burst read

PQFP80 (T)

LBGA

– Asynchronous page read

■ Hardware block protection

– WP pin for write protect of the 4 outermost

parameter blocks and all main blocks

– RP pin for write protect of all blocks

■ Optimized for FDI drivers

LBGA80 10 × 12 mm

– Fast program / erase suspend latency

time < 6 µs

– Common Flash interface

■ Memory blocks

– 8 parameters blocks (top or bottom)

– 31 main blocks

■ Low power consumption

– 5 µA typical deep power-down

– 60 µA typical standby for M58BW016DT/B

150 µA typical standby for M58BW016FT/B

– Automatic standby after asynchronous read

■ Electronic signature

– Manufacturer code: 20h

– Top device code: 8836h

– Bottom device code: 8835h

■ 100 K write/erase cycling + 20 years data

retention (minimum)

■ High reliability level with over 1 M write/erase

cycling sustained

■ ECOPACK packages available

March 2008

Rev 17

1/70

www.numonyx.com

12 3 4 5 6 7...70

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