5秒后页面跳转
M48Z35AV-70MH6 PDF预览

M48Z35AV-70MH6

更新时间: 2024-11-12 22:17:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
16页 127K
描述
256 Kbit 32Kb x8 ZEROPOWER SRAM

M48Z35AV-70MH6 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.5
最长访问时间:70 ns其他特性:SNAPHAT BATTERY TO BE ORDERED SEPARATELY
JESD-30 代码:R-PDSO-G28内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

M48Z35AV-70MH6 数据手册

 浏览型号M48Z35AV-70MH6的Datasheet PDF文件第2页浏览型号M48Z35AV-70MH6的Datasheet PDF文件第3页浏览型号M48Z35AV-70MH6的Datasheet PDF文件第4页浏览型号M48Z35AV-70MH6的Datasheet PDF文件第5页浏览型号M48Z35AV-70MH6的Datasheet PDF文件第6页浏览型号M48Z35AV-70MH6的Datasheet PDF文件第7页 
M48Z35AY  
M48Z35AV  
®
256 Kbit (32Kb x8) ZEROPOWER SRAM  
INTEGRATED ULTRA LOW POWER SRAM,  
SNAPHAT (SH)  
Battery  
POWER-FAIL CONTROL CIRCUIT and  
BATTERY  
READ CYCLE TIME EQUALS WRITE CYCLE  
TIME  
BATTERY LOW FLAG (BOK)  
AUTOMATIC POWER-FAIL CHIP DESELECT  
28  
and WRITE PROTECTION  
1
WRITE PROTECT VOLTAGES  
28  
PCDIP28 (PC)  
Battery CAPHAT  
1
(V  
= Power-fail Deselect Voltage):  
PFD  
– M48Z35AY: 4.20V V  
4.50V  
PFD  
SOH28 (MH)  
– M48Z35AV: 2.7V V  
3.0V  
PFD  
SELF-CONTAINED BATTERY in the CAPHAT  
DIP PACKAGE  
Figure 1. Logic Diagram  
PACKAGING INCLUDES a 28-LEAD SOIC and  
®
SNAPHAT TOP  
(to be Ordered Separately)  
SOIC PACKAGE PROVIDES DIRECT  
CONNECTION for a SNAPHAT TOP which  
CONTAINS the BATTERY and CRYSTAL  
V
CC  
PIN and FUNCTION COMPATIBLE with  
JEDEC STANDARD 32K x8 SRAMs  
15  
8
DESCRIPTION  
The M48Z35AY/35AV ZEROPOWER RAM is a  
®
A0-A14  
DQ0-DQ7  
32 Kbit x8 non-volatile static RAM that integrates  
power-fail deselect circuitry and battery control  
logic on a single die. The monolithic chip is avail-  
able in two special packages to provide a highly in-  
tegrated battery backed-up memory solution.  
W
E
M48Z35AY  
M48Z35AV  
G
Table 1. Signal Names  
A0-A14  
Address Inputs  
Data Inputs / Outputs  
Chip Enable  
DQ0-DQ7  
V
E
SS  
AI02781B  
G
W
Output Enable  
Write Enable  
Supply Voltage  
Ground  
V
CC  
V
SS  
April 2000  
1/16  

与M48Z35AV-70MH6相关器件

型号 品牌 获取价格 描述 数据表
M48Z35AV-70MH6TR STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AV-70PC1 STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AV-70PC1TR STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AV-70PC6 STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AV-70PC6TR STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AVMH STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AVPC STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AVSH STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AY STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM
M48Z35AY-100MH1 STMICROELECTRONICS

获取价格

256 Kbit 32Kb x8 ZEROPOWER SRAM