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M381L3223DTM-LCC PDF预览

M381L3223DTM-LCC

更新时间: 2024-01-20 19:22:13
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
22页 355K
描述
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC

M381L3223DTM-LCC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:DIMM, DIMM184Reach Compliance Code:unknown
风险等级:5.84最长访问时间:0.65 ns
最大时钟频率 (fCLK):200 MHzI/O 类型:COMMON
JESD-30 代码:R-PDMA-N184内存密度:2415919104 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
端子数量:184字数:33554432 words
字数代码:32000000最高工作温度:70 °C
最低工作温度:组织:32MX72
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIMM封装等效代码:DIMM184
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:2.6 V认证状态:Not Qualified
刷新周期:8192子类别:DRAMs
最大压摆率:2.7 mA标称供电电压 (Vsup):2.6 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

M381L3223DTM-LCC 数据手册

 浏览型号M381L3223DTM-LCC的Datasheet PDF文件第1页浏览型号M381L3223DTM-LCC的Datasheet PDF文件第2页浏览型号M381L3223DTM-LCC的Datasheet PDF文件第4页浏览型号M381L3223DTM-LCC的Datasheet PDF文件第5页浏览型号M381L3223DTM-LCC的Datasheet PDF文件第6页浏览型号M381L3223DTM-LCC的Datasheet PDF文件第7页 
128MB, 256MB, 512MB Unbuffered DIMM  
DDR SDRAM  
184Pin Unbuffered DIMM based on 256Mb D-die (x8, x16)  
Ordering Information  
Part Number  
Density  
128MB  
256MB  
512MB  
256MB  
512MB  
Organization  
16M x 64  
32M x 64  
64M x 64  
32M x 72  
64M x 72  
Component Composition  
Height  
M368L1624DTM-C(L)CC/C4  
M368L3223DTM-C(L)CC/C4  
M368L6423DTM-C(L)CC/C4  
M381L3223DTM-C(L)CC/C4  
M381L6423DTM-C(L)CC/C4  
16Mx16( K4H561638D) * 4EA  
32Mx8( K4H560838D) * 8EA  
32Mx8( K4H560838D) * 16EA  
32Mx8( K4H560838D) * 9EA  
32Mx8( K4H560838D) * 18EA  
1,250(mil)  
1,250(mil)  
1,250(mil)  
1,250(mil)  
1,250(mil)  
Operating Frequencies  
CC(DDR400@CL=3)  
200MHz  
C4(DDR400@CL=3)  
Speed @CL3  
CL-tRCD-tRP  
200MHz  
3-4-4  
3-3-3  
Feature  
• Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V  
Double-data-rate architecture; two data transfers per clock cycle  
• Bidirectional data strobe(DQS)  
• Differential clock inputs(CK and CK)  
• DLL aligns DQ and DQS transition with CK transition  
• Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333  
• Programmable Burst length (2, 4, 8)  
• Programmable Burst type (sequential & interleave)  
• Edge aligned data output, center aligned data input  
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)  
• Serial presence detect with EEPROM  
• PCB : Height 1,250 (mil), single (128MB, 256MB) and double(512MB) sided  
• SSTL_2 Interface  
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.  
Rev. 1.2 May. 2003  

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