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M36W416BG PDF预览

M36W416BG

更新时间: 2024-02-28 08:33:12
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存静态存储器
页数 文件大小 规格书
62页 435K
描述
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product

M36W416BG 数据手册

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M36W416TG  
M36W416BG  
16 Mbit (1Mb x16, Boot Block) Flash Memory  
and 4Mbit (256Kb x16) SRAM, Multiple Memory Product  
PRELIMINARY DATA  
FEATURES SUMMARY  
MULTIPLE MEMORY PRODUCT  
SRAM  
4 Mbit (256Kb x 16)  
– 16 Mbit (1Mb x 16) Boot Block Flash Memory  
– 4 Mbit (256Kb x 16) SRAM  
ACCESS TIME: 70ns  
SUPPLY VOLTAGE  
LOW V  
DATA RETENTION: 1.5V  
DDS  
– V  
– V  
– V  
= V  
= 2.7V to 3.3V  
DDF  
DDQF  
DDS  
POWER DOWN FEATURES USING TWO  
CHIP ENABLE INPUTS  
= V  
= 2.7V to 3.3V  
DDS  
= 12V for Fast Program (optional)  
PPF  
Figure 1. Packages  
ACCESS TIME: 70ns, 85ns  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M36W416TG: 88CEh  
– Bottom Device Code, M36W416BG: 88CFh  
FBGA  
FLASH MEMORY  
MEMORY BLOCKS  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
Stacked LFBGA66 (ZA)  
12 x 8mm  
PROGRAMMING TIME  
– 10µs typical  
– Double Word Programming Option  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
F
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
SECURITY  
– 64 bit user programmable OTP cells  
– 64 bit unique device identifier  
– One parameter block permanently lockable  
November 2002  
1/62  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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