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M34C02-RMM1TP PDF预览

M34C02-RMM1TP

更新时间: 2024-11-17 10:38:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
26页 388K
描述
256X8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, LEAD FREE, VFDFPN-8

M34C02-RMM1TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DFP
包装说明:2 X 3 MM, LEAD FREE, VFDFPN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.83
最大时钟频率 (fCLK):0.1 MHzJESD-30 代码:R-PDSO-N8
长度:3 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2 mm
最长写入周期时间 (tWC):10 ms

M34C02-RMM1TP 数据手册

 浏览型号M34C02-RMM1TP的Datasheet PDF文件第2页浏览型号M34C02-RMM1TP的Datasheet PDF文件第3页浏览型号M34C02-RMM1TP的Datasheet PDF文件第4页浏览型号M34C02-RMM1TP的Datasheet PDF文件第5页浏览型号M34C02-RMM1TP的Datasheet PDF文件第6页浏览型号M34C02-RMM1TP的Datasheet PDF文件第7页 
M34C02  
2 Kbit Serial I²C Bus EEPROM  
For DIMM Serial Presence Detect  
FEATURES SUMMARY  
Software Data Protection for lower 128 bytes  
Figure 1. Packages  
2
Two Wire I C Serial Interface  
100kHz and 400kHz Transfer Rates  
Single Supply Voltage:  
– 2.5 to 5.5V up to 400kHz for M34C02-W  
– 2.2 to 5.5V up to 400kHz for M34C02-L  
– 1.8 to 5.5V up to 100kHz for M34C02-R  
– 1.7 to 3.6V up to 100kHz for M34C02-F  
BYTE and PAGE WRITE (up to 16 bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
8
1
PDIP8 (BN)  
Automatic Address Incrementing  
8
Enhanced ESD/Latch-Up Protection  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
1
SO8 (MN)  
150 mil width  
VFDFPN8 (MM)  
2x3mm² (MLP)  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
July 2003  
1/26  

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