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M34C02-RMN1TG PDF预览

M34C02-RMN1TG

更新时间: 2024-11-16 15:39:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
26页 388K
描述
256X8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, SO-8

M34C02-RMN1TG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, LEAD FREE, PLASTIC, SO-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.82
最大时钟频率 (fCLK):0.1 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

M34C02-RMN1TG 数据手册

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M34C02  
2 Kbit Serial I²C Bus EEPROM  
For DIMM Serial Presence Detect  
FEATURES SUMMARY  
Software Data Protection for lower 128 bytes  
Figure 1. Packages  
2
Two Wire I C Serial Interface  
100kHz and 400kHz Transfer Rates  
Single Supply Voltage:  
– 2.5 to 5.5V up to 400kHz for M34C02-W  
– 2.2 to 5.5V up to 400kHz for M34C02-L  
– 1.8 to 5.5V up to 100kHz for M34C02-R  
– 1.7 to 3.6V up to 100kHz for M34C02-F  
BYTE and PAGE WRITE (up to 16 bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
8
1
PDIP8 (BN)  
Automatic Address Incrementing  
8
Enhanced ESD/Latch-Up Protection  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
1
SO8 (MN)  
150 mil width  
VFDFPN8 (MM)  
2x3mm² (MLP)  
TSSOP8 (DW)  
169 mil width  
TSSOP8 (DS)  
3x3mm² body size (MSOP)  
July 2003  
1/26  

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