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M30W0R7000B1ZAQF PDF预览

M30W0R7000B1ZAQF

更新时间: 2024-10-29 20:07:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器内存集成电路
页数 文件大小 规格书
87页 569K
描述
8MX16 FLASH 1.8V PROM, 60ns, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88

M30W0R7000B1ZAQF 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
针数:88Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.57最长访问时间:60 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION POSSIBLE启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B88
长度:10 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8, 255
端子数量:88字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA88,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
页面大小:4 words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.8,1.8/2 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:4K,32K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.045 mA最大供电电压 (Vsup):2 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

M30W0R7000B1ZAQF 数据手册

 浏览型号M30W0R7000B1ZAQF的Datasheet PDF文件第2页浏览型号M30W0R7000B1ZAQF的Datasheet PDF文件第3页浏览型号M30W0R7000B1ZAQF的Datasheet PDF文件第4页浏览型号M30W0R7000B1ZAQF的Datasheet PDF文件第5页浏览型号M30W0R7000B1ZAQF的Datasheet PDF文件第6页浏览型号M30W0R7000B1ZAQF的Datasheet PDF文件第7页 
M30W0R7000T1  
M30W0R7000B1  
128 Mbit (8Mb x 16, Multiple Bank, Burst)  
1.8V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Package  
VDD = 1.7V to 2V for Program, Erase and  
Read  
VDDQ = 1.7V to 2.24V for I/O Buffers  
VPP = 12V for fast Program (optional)  
SYNCHRONOUS / ASYNCHRONOUS READ  
Synchronous Burst Read mode: 66MHz  
Asynchronous/ Synchronous Page Read  
mode  
FBGA  
Random Access: 60ns  
SYNCHRONOUS BURST READ SUSPEND  
PROGRAMMING TIME  
8µs by Word typical for Fast Factory  
Program  
Double/Quadruple Word Program option  
Enhanced Factory Program options  
TFBGA88 (ZAQ)  
8 x 10mm  
MEMORY BLOCKS  
Multiple Bank Memory Array: 4 Mbit  
Banks  
ELECTRONIC SIGNATURE  
Parameter Blocks (Top or Bottom  
location)  
Manufacturer Code: 20h  
Top Device Code, M30W0R7000T1:  
881Eh  
DUAL OPERATIONS  
Program Erase in one Bank while Read in  
others  
Bottom Device Code, M30W0R7000B1:  
881Fh  
No delay between Read and Write  
operations  
PACKAGE  
Compliant with Lead-Free Soldering  
Processes  
BLOCK LOCKING  
All blocks locked at Power up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
Lead-Free Versions  
SECURITY  
128 bit user programmable OTP cells  
64 bit unique device number  
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
December 2004  
1/87  
 
 

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