M29W008AT80N5TR

更新时间： 2024-01-28 22:03:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
30页	219K
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数据手册

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M29W008AT80N5TR 数据手册

M29W008AT

M29W008AB

8 Mbit (1Mb x8, Boot Block)

Low Voltage Single Supply Flash Memory

■ 2.7V to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 80ns

■ PROGRAMMING TIME: 10µs typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Status Register bits and Ready/Busy Output

■ SECURITY PROTECTION MEMORY AREA

■ INSTRUCTIONS ADDRESS CODING: 3 digits

■ MEMORY BLOCKS

TSOP40 (N)

10 x 20mm

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTI BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

Figure 1. Logic Diagram

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

A0-A19

DQ0-DQ7

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

M29W008AT

M29W008AB

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M29W008AT: D2h

– Bottom Device Code, M29W008AB: DCh

AI02716

March 2000

1/30

12 3 4 5 6 7...30

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