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M29W008B-90N5TR PDF预览

M29W008B-90N5TR

更新时间: 2024-02-13 21:06:14
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
30页 220K
描述
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory

M29W008B-90N5TR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:10 X 20 MM, PLASTIC, TSOP-40
针数:40Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.19Is Samacsys:N
最长访问时间:90 ns其他特性:BOTTOM BOOT BLOCK
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G40JESD-609代码:e0
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,15
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-20 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M29W008B-90N5TR 数据手册

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M29W008T  
M29W008B  
8 Mbit (1Mb x8, Boot Block)  
Low Voltage Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29W008T and M29W008B are replaced  
respectively by the M29W008AT and  
M29W008AB  
2.7V to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
FAST ACCESS TIME: 100ns  
FAST PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
– Status Register bits and Ready/Busy Output  
MEMORY BLOCKS  
TSOP40 (N)  
10 x 20 mm  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code, M29W008T: D2h  
– Device Code, M29W008B: DCh  
20  
8
A0-A19  
DQ0-DQ7  
RB  
W
E
M29W008T  
M29W008B  
G
DESCRIPTION  
The M29W008 is a non-volatile memory that may  
be erased electrically at the block or chip level and  
programmed in-system on a Byte-by-Byte basis  
using only a single 2.7V to 3.6V VCC supply. For  
Program and Erase operations the necessary high  
voltages are generated internally. The device can  
also be programmed in standard programmers.  
RP  
V
SS  
AI02189  
The array matrix organisation allows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protected against pro-  
graming and erase on programming equipment,  
and temporarily unprotected to make changes in  
June 1999  
1/30  
This is information on a product still in production but not recommended for new designs.  

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