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M29KW016E100M1 PDF预览

M29KW016E100M1

更新时间: 2024-11-05 04:55:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管
页数 文件大小 规格书
33页 705K
描述
1MX16 FLASH 12V PROM, 100ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

M29KW016E100M1 数据手册

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M29KW016E  
16 Mbit (1Mb x16, Uniform Block)  
3V Supply LightFlash™ Memory  
NOT FOR NEW DESIGN  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– VCC = 2.7V to 3.6V for Read  
– VPP = 11.4V to 12.6V for Program and Erase  
ACCESS TIME:  
90ns at VCC = 3.0V to 3.6V  
100ns at VCC = 2.7V to 3.6V  
PROGRAMMING TIME  
– 9µs per Word typical  
SO44 (M)  
– Multiple Word Programming Option (2s  
typical Chip Program)  
ERASE TIME  
– 11s typical factory Chip Erase  
UNIFORM BLOCKS  
– 8 blocks of 2 Mbits  
TSOP48 (N)  
12 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Word Program algorithms  
10,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
FBGA  
TFBGA48 (ZA)  
6 x 9mm  
– Device Code : 88ABh  
December 2005  
1/33  
This is information on a product still in production but not recommended for new designs.  

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