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M29KW016E110M1T PDF预览

M29KW016E110M1T

更新时间: 2024-11-23 22:11:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
31页 262K
描述
16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory

M29KW016E110M1T 数据手册

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M29KW016E  
16 Mbit (1Mb x16, Uniform Block)  
3V Supply LightFlash™ Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V for Read  
CC  
– V = 11.4V to 12.6V for Program and Erase  
PP  
ACCESS TIME: 90, 110ns  
PROGRAMMING TIME  
– 9µs per Word typical  
– Multiple Word Programming Option (2s  
typical Chip Program)  
SO44 (M)  
ERASE TIME  
– 11s typical factory Chip Erase  
UNIFORM BLOCKS  
– 8 blocks of 2 Mbits  
PROGRAM/ERASE CONTROLLER  
– Embedded Word Program algorithms  
TSOP48 (N)  
12 x 20mm  
10,000 PROGRAM/ERASE CYCLES per  
BLOCK  
FBGA  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code : 88ABh  
TFBGA48 (ZA)  
6 x 9mm  
July 2002  
1/31  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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