Datasheet > M29F200BT55N6T

M29F200BT55N6T

更新时间： 2024-11-29 22:55:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
22页	147K
描述
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

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M29F200BT55N6T 数据手册

M29F200BT

M29F200BB

2 Mbit (256Kb x8 or 128Kb x16, Boot Block)

Single Supply Flash Memory

PRELIMINARY DATA

■ SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8µs per Byte/Word typical

■ 7 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 4 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

TSOP48 (N)

12 x 20mm

SO44 (M)

Figure 1. Logic Diagram

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

A0-A16

DQ0-DQ14

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

DQ15A–1

BYTE

■ 100,000 PROGRAM/ERASE CYCLES per

M29F200BT

M29F200BB

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– M29F200BT Device Code: 00D3h

– M29F200BB Device Code: 00D4h

AI02912

October 1999

1/22

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...22

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