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M29F200BB45N1 PDF预览

M29F200BB45N1

更新时间: 2024-11-29 20:09:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
39页 312K
描述
128KX16 FLASH 5V PROM, 45ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M29F200BB45N1 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.18最长访问时间:45 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,3
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29F200BB45N1 数据手册

 浏览型号M29F200BB45N1的Datasheet PDF文件第2页浏览型号M29F200BB45N1的Datasheet PDF文件第3页浏览型号M29F200BB45N1的Datasheet PDF文件第4页浏览型号M29F200BB45N1的Datasheet PDF文件第5页浏览型号M29F200BB45N1的Datasheet PDF文件第6页浏览型号M29F200BB45N1的Datasheet PDF文件第7页 
M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
Features  
Single 5V±10% supply voltage for Program,  
Erase and Read operations  
Access time: 45, 50, 70, 90ns  
Programming time  
– 8µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
7 memory blocks  
– 1 Boot Block (Top or Bottom location)  
– 2 parameter and 4 main blocks  
Program/Erase controller  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase  
algorithm  
44  
– Status Register polling and toggle bits  
– Ready/Busy output pin  
Erase Suspend and Resume modes  
1
– Read and Program another block during  
Erase Suspend  
SO44 (M)  
Unlock Bypass Program command  
– Faster Production/Batch Programming  
Temporary Block Unprotection mode  
Low power consumption  
– Standby and Automatic Standby  
100,000 Program/Erase cycles per block  
20 years data retention  
– Defectivity below 1 ppm/year  
Electronic Signature  
– Manufacturer code: 0020h  
Top Device code M29F200BT: 00D3h  
– Bottom Device code: M29F200BB: 00D4h  
®
ECOPACK packages available  
March 2007  
Rev 5  
1/39  
www.st.com  
1
 

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