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M29F200BB50MT3E PDF预览

M29F200BB50MT3E

更新时间: 2024-11-11 04:53:39
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器光电二极管
页数 文件大小 规格书
29页 583K
描述
128KX16 FLASH 5V PROM, 50ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SO-44

M29F200BB50MT3E 数据手册

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M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
FEATURES SUMMARY  
SINGLE 5V±10% SUPPLY VOLTAGE for  
Figure 1. Packages  
PROGRAM, ERASE and READ  
OPERATIONS  
ACCESS TIME: 45, 50, 70, 90ns  
PROGRAMMING TIME  
8µs per Byte/Word typical  
7 MEMORY BLOCKS  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 4 Main Blocks  
TSOP48 (N)  
12 x 20mm  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program algorithm  
Embedded Multi-Block/Chip Erase  
algorithm  
Status Register Polling and Toggle Bits  
Ready/Busy Output Pin  
44  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
1
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
SO44 (MT)  
TEMPORARY BLOCK UNPROTECTION  
MODE  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29F200BT: 00D3h  
Bottom Device CodeM29F200BB: 00D4h  
ECOPACK® PACKAGES AVAILABLE  
September 2005  
1/29  

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