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M29F200BB45N6F PDF预览

M29F200BB45N6F

更新时间: 2024-11-10 13:01:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管
页数 文件大小 规格书
22页 147K
描述
128KX16 FLASH 5V PROM, 45ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

M29F200BB45N6F 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.2最长访问时间:45 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e3/e6
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,3
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29F200BB45N6F 数据手册

 浏览型号M29F200BB45N6F的Datasheet PDF文件第2页浏览型号M29F200BB45N6F的Datasheet PDF文件第3页浏览型号M29F200BB45N6F的Datasheet PDF文件第4页浏览型号M29F200BB45N6F的Datasheet PDF文件第5页浏览型号M29F200BB45N6F的Datasheet PDF文件第6页浏览型号M29F200BB45N6F的Datasheet PDF文件第7页 
M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8µs per Byte/Word typical  
44  
7 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
CC  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
17  
15  
MODE  
A0-A16  
DQ0-DQ14  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
W
DQ15A–1  
BYTE  
RB  
100,000 PROGRAM/ERASE CYCLES per  
M29F200BT  
M29F200BB  
E
G
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
RP  
– M29F200BT Device Code: 00D3h  
– M29F200BB Device Code: 00D4h  
V
SS  
AI02912  
October 1999  
1/22  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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