Datasheet > M29F080A

M29F080A

更新时间： 2024-11-03 22:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
21页	133K
描述
8 Mbit 1Mb x8, Uniform Block Single Supply Flash Memory

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M29F080A 数据手册

M29F080A

8 Mbit (1Mb x8, Uniform Block) Single Supply Flash Memory

■ SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 8µs by Byte typical

■ 16 UNIFORM 64 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

TSOP40 (N)

10 x 20mm

SO44 (M)

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

A0-A19

DQ0-DQ7

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F1h

M29F080A

AI00501C

April 2000

1/21

12 3 4 5 6 7...21

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M29F080A120M1T	NUMONYX	获取价格	Flash, 1MX8, 90ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
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M29F080A-120N1T	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Uniform Block Single Supply Flash Memory