M29F040-150N3RTR

更新时间： 2024-11-22 13:09:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
31页	234K
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数据手册

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M29F040-150N3RTR 数据手册

M29F040

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

NOT FOR NEW DESIGN

M29F040 is replaced by the M29F040B

5V ± 10% SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

FAST ACCESS TIME: 70ns

BYTE PROGRAMMING TIME: 10µs typical

ERASE TIME

– Block: 1.0 sec typical

– Chip: 2.5 sec typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for

P/E.C. Status

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

Figure 1. Logic Diagram

– Multiblock Erase

ERASE SUSPEND and RESUME MODES

LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 25µA typical

– Automatic Stand-by mode

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

A0-A18

DQ0-DQ7

M29F040

Table 1. Signal Names

A0-A18

Address Inputs

Data Input / Outputs

Chip Enable

DQ0-DQ7

AI01372

Output Enable

Write Enable

Supply Voltage

Ground

V_CC

V_SS

November 1999

1/31

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...31

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