品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 闪存 | |
页数 | 文件大小 | 规格书 |
31页 | 234K | |
描述 | ||
512KX8 FLASH 5V PROM, 150ns, PDSO32, 8 X 20 MM, PLASTIC, REVERSE, TSOP-32 |
是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | TSOP1-R, TSSOP32,.8,20 | 针数: | 32 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.73 |
最长访问时间: | 150 ns | 其他特性: | 100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE |
命令用户界面: | YES | 数据轮询: | YES |
数据保留时间-最小值: | 20 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | R-PDSO-G32 | JESD-609代码: | e0 |
长度: | 18.4 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 部门数/规模: | 8 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP1-R |
封装等效代码: | TSSOP32,.8,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
编程电压: | 5 V | 认证状态: | Not Qualified |
反向引出线: | YES | 座面最大高度: | 1.2 mm |
部门规模: | 64K | 最大待机电流: | 0.00005 A |
子类别: | Flash Memories | 最大压摆率: | 0.04 mA |
最大供电电压 (Vsup): | 5.25 V | 最小供电电压 (Vsup): | 4.75 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 切换位: | YES |
类型: | NOR TYPE | 宽度: | 8 mm |
Base Number Matches: | 1 |
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