5秒后页面跳转
M29F002T-120K1 PDF预览

M29F002T-120K1

更新时间: 2024-02-17 00:25:06
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路
页数 文件大小 规格书
29页 233K
描述
Flash, 256KX8, 120ns, PQCC32, PLASTIC, LCC-32

M29F002T-120K1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFJ包装说明:PLASTIC, LCC-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.19最长访问时间:120 ns
其他特性:TOP BOOT BLOCK启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.995 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,2,1,3端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD切换位:YES
类型:NOR TYPE宽度:11.455 mm
Base Number Matches:1

M29F002T-120K1 数据手册

 浏览型号M29F002T-120K1的Datasheet PDF文件第1页浏览型号M29F002T-120K1的Datasheet PDF文件第3页浏览型号M29F002T-120K1的Datasheet PDF文件第4页浏览型号M29F002T-120K1的Datasheet PDF文件第5页浏览型号M29F002T-120K1的Datasheet PDF文件第6页浏览型号M29F002T-120K1的Datasheet PDF文件第7页 
M29F002T, M29F002NT, M29F002B  
Figure 2A. DIP Pin Connections  
Figure 2B. LCC Pin Connections  
(*) RPNC  
A16  
A15  
A12  
A7  
1
2
3
4
5
6
7
8
9
32  
31  
V
CC  
W
30 A17  
29 A14  
28 A13  
27 A8  
1 32  
A7  
A14  
A13  
A8  
A6  
A6  
A5  
A5  
26 A9  
M29F002T  
M29F002B  
M29F002NT  
A4  
25 A11  
A4  
A9  
M29F002T  
M29F002B  
A3  
24  
23 A10  
22  
G
A3  
A2  
9
25 A11  
G
A2 10  
A1 11  
E
A1  
A10  
E
A0 12  
21 DQ7  
20 DQ6  
19 DQ5  
18 DQ4  
17 DQ3  
A0  
DQ0 13  
DQ1 14  
DQ2 15  
DQ0  
DQ7  
17  
V
16  
SS  
AI02080C  
AI02079C  
Note: Pin 1 is not connected for the M29F002NT  
Figure 2C. TSOP Pin Connections  
Table 1. Signal Names  
A0-A17  
DQ0-DQ7  
E
Address Inputs  
Data Input/Outputs, Command Inputs  
Chip Enable  
A11  
A9  
1
32  
G
A10  
E
G
Output Enable  
A8  
A13  
A14  
A17  
W
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
W
Write Enable  
RPNC (*)  
VCC  
Reset / Block Temporary Unprotect  
Supply Voltage  
V
8
9
25  
24  
M29F002T  
M29F002B  
CC  
V
RPNC  
A16  
SS  
VSS  
Ground  
DQ2  
DQ1  
DQ0  
A0  
A15  
A12  
A7  
DESCRIPTION (cont’d)  
the application. Each block can be programmed  
and erased over 100,000 cycles.  
A6  
A1  
A5  
A2  
Instructions for Read/Reset, Auto Selectfor reading  
the Electronic Signature or Block Protection status,  
Programming, Block and Chip Erase, Erase Sus-  
pend and Resume are written to the device in  
cycles of commands to a Command Interface using  
standard microprocessor write timings. The device  
is offered in PLCC32, PDIP32 and TSOP32 (8 x 20  
mm) packages.  
A4  
16  
17  
A3  
AI02361B  
2/29  

与M29F002T-120K1相关器件

型号 品牌 获取价格 描述 数据表
M29F002T-120K1TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120K1TR NUMONYX

获取价格

Flash, 256KX8, 120ns, PQCC32, PLASTIC, LCC-32
M29F002T-120K6 NUMONYX

获取价格

256KX8 FLASH 5V PROM, 120ns, PQCC32, PLASTIC, LCC-32
M29F002T-120K6TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120N1TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120N1TR NUMONYX

获取价格

Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
M29F002T-120N6TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120P1TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120P6TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120XK1 NUMONYX

获取价格

256KX8 FLASH 5V PROM, 120ns, PQCC32, PLASTIC, LCC-32