Datasheet > M29F002T-120XK6

M29F002T-120XK6

更新时间： 2024-01-08 05:38:34

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器
页数	文件大小	规格书
29页	233K
描述
256KX8 FLASH 5V PROM, 120ns, PQCC32, PLASTIC, LCC-32

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中文翻译

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数据手册

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M29F002T-120XK6 数据手册

M29F002T, M29F002NT

M29F002B

2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory

NOT FOR NEW DESIGN

M29F002T, M29F002NT and M29F002B are

replaced respectively by the M29F002BT,

M29F002BNT and M29F002BB.

5V ± 10% SUPPLY VOLTAGE for PROGRAM,

ERASE and READ OPERATIONS

FAST ACCESS TIME: 70ns

FAST PROGRAMMING TIME: 10µs typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

PLCC32 (K)

PDIP32 (P)

– Status Register bits

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

TSOP32 (N)

8 x 20mm

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

Figure 1. Logic Diagram

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code, M29F002T: B0h

– Device Code, M29F002NT: B0h

– Device Code, M29F002B: 34h

A0-A17

DQ0-DQ7

M29F002T

M29F002B

M29F002NT

DESCRIPTION

The M29F002 is a non-volatile memory thatmay be

erased electrically at the block or chip level and

programmed in-system on a Byte-by-Byte basis

using only a single 5V V_CCsupply.For Program and

Erase operations the necessary high voltages are

generated internally. The device can also be pro-

grammed in standard programmers.

The array matrix organisation allows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protected against pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

(*) RPNC

AI02078C

Note: * RPNC function is not available for the M29F002NT

July 2000

1/29

This is information on a product still in production but not recommended for new design.

12 3 4 5 6 7...29

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与M29F002T-120XK6相关器件

型号	品牌	获取价格	描述	数据表
M29F002T-120XK6TR	STMICROELECTRONICS	获取价格	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120XK6TR	NUMONYX	获取价格	Flash, 256KX8, 120ns, PQCC32, PLASTIC, LCC-32
M29F002T-120XN1	STMICROELECTRONICS	获取价格	256KX8 FLASH 5V PROM, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
M29F002T-120XN1	NUMONYX	获取价格	256KX8 FLASH 5V PROM, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
M29F002T-120XN1TR	STMICROELECTRONICS	获取价格	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120XN1TR	NUMONYX	获取价格	Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
M29F002T-120XN6	STMICROELECTRONICS	获取价格	暂无描述
M29F002T-120XN6	NUMONYX	获取价格	Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
M29F002T-120XN6TR	STMICROELECTRONICS	获取价格	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
M29F002T-120XN6TR	NUMONYX	获取价格	Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32