Datasheet > M29F002BNB45P1T

M29F002BNB45P1T

更新时间： 2024-11-03 23:08:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
22页	190K
描述
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

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数据手册

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M29F002BNB45P1T 数据手册

M29F002BT, M29F002BNT

M29F002BB, M29F002BNB

2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory

■ SINGLE 5V ± 10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45 ns

■ PROGRAMMING TIME

– 8 µs by Byte typical

■ 7 MEMORY BLOCKS

PLCC32 (K)

TSOP32 (N)

8 x 20mm

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 4 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

PDIP32 (P)

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

Figure 1. Logic Diagram

MODE

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

A0-A17

DQ0-DQ7

■ ELECTRONIC SIGNATURE

M29F002BT

– Manufacturer Code: 20h

M29F002BB

M29F002BNT

M29F002BNB

– Top Device Code M29F002BT: B0h

– Top Device Code M29F002BNT: B0h

– Bottom Device Code M29F002BB: 34h

– Bottom Device Code M29F002BNB: 34h

AI02957B

April 2002

1/22

12 3 4 5 6 7...22

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