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M29F002BNB55K3E PDF预览

M29F002BNB55K3E

更新时间: 2024-12-01 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
22页 190K
描述
256KX8 FLASH 5V PROM, 55ns, PQCC32, LEAD FREE, PLASTIC, LCC-32

M29F002BNB55K3E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:QFJ包装说明:LEAD FREE, PLASTIC, LCC-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.16最长访问时间:55 ns
其他特性:BOTTOM BOOT BLOCK启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,3
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:3.56 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:11.43 mmBase Number Matches:1

M29F002BNB55K3E 数据手册

 浏览型号M29F002BNB55K3E的Datasheet PDF文件第2页浏览型号M29F002BNB55K3E的Datasheet PDF文件第3页浏览型号M29F002BNB55K3E的Datasheet PDF文件第4页浏览型号M29F002BNB55K3E的Datasheet PDF文件第5页浏览型号M29F002BNB55K3E的Datasheet PDF文件第6页浏览型号M29F002BNB55K3E的Datasheet PDF文件第7页 
M29F002BT, M29F002BNT  
M29F002BB, M29F002BNB  
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory  
SINGLE 5V ± 10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45 ns  
PROGRAMMING TIME  
– 8 µs by Byte typical  
7 MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 4 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
32  
– Read and Program another Block during  
Erase Suspend  
1
PDIP32 (P)  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
Figure 1. Logic Diagram  
MODE  
LOW POWER CONSUMPTION  
V
– Standby and Automatic Standby  
CC  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
18  
8
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
A0-A17  
DQ0-DQ7  
ELECTRONIC SIGNATURE  
W
M29F002BT  
– Manufacturer Code: 20h  
M29F002BB  
M29F002BNT  
M29F002BNB  
E
G
– Top Device Code M29F002BT: B0h  
– Top Device Code M29F002BNT: B0h  
– Bottom Device Code M29F002BB: 34h  
– Bottom Device Code M29F002BNB: 34h  
RP  
V
SS  
AI02957B  
April 2002  
1/22  

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