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M28W320ECB70N6E PDF预览

M28W320ECB70N6E

更新时间: 2024-11-12 22:28:23
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
53页 780K
描述
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

M28W320ECB70N6E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.09最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK启动块:BOTTOM
JESD-30 代码:R-PDSO-G48JESD-609代码:e3/e6
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M28W320ECB70N6E 数据手册

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M28W320ECT  
M28W320ECB  
32 Mbit (2Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V Core Power Supply  
DD  
– V  
= 1.65V to 3.6V for Input/Output  
DDQ  
– V = 12V for fast Program (optional)  
PP  
FBGA  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME:  
– 10µs typical  
TFBGA47 (ZB)  
6.39 x 6.37mm  
– Double Word Programming Option  
– Quadruple Word Programming Option  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
BLOCK LOCKING  
– All blocks locked at Power Up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
TSOP48 (N)  
12 x 20mm  
SECURITY  
– 128 bit user Programmable OTP cells  
– 64 bit unique device identifier  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M28W320ECT: 88BAh  
– Bottom Device Code, M28W320ECB: 88BBh  
April 2003  
1/53  

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