5秒后页面跳转
M28W160ECB100ZB1S PDF预览

M28W160ECB100ZB1S

更新时间: 2024-11-11 23:05:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
50页 860K
描述
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160ECB100ZB1S 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:BGA包装说明:6.39 X 6.37 MM, 0.75MM PITCH, TFBGA-46
针数:46Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.16Is Samacsys:N
最长访问时间:100 ns启动块:BOTTOM
JESD-30 代码:R-PBGA-B46JESD-609代码:e1
长度:6.39 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:46
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:6.37 mm
Base Number Matches:1

M28W160ECB100ZB1S 数据手册

 浏览型号M28W160ECB100ZB1S的Datasheet PDF文件第2页浏览型号M28W160ECB100ZB1S的Datasheet PDF文件第3页浏览型号M28W160ECB100ZB1S的Datasheet PDF文件第4页浏览型号M28W160ECB100ZB1S的Datasheet PDF文件第5页浏览型号M28W160ECB100ZB1S的Datasheet PDF文件第6页浏览型号M28W160ECB100ZB1S的Datasheet PDF文件第7页 
M28W160ECT  
M28W160ECB  
16 Mbit (1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VDD = 2.7V to 3.6V Core Power Supply  
VDDQ= 1.65V to 3.6V for Input/Output  
VPP = 12V for fast Program (optional)  
FBGA  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME:  
10µs typical  
Double Word Programming Option  
TFBGA46 (ZB)  
6.39 x 6.37mm  
COMMON FLASH INTERFACE  
64 bit Security Code  
MEMORY BLOCKS  
Parameter Blocks (Top or Bottom  
location)  
Main Blocks  
BLOCK LOCKING  
All blocks locked at Power Up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
TSOP48 (N)  
12 x 20mm  
SECURITY  
64 bit user Programmable OTP cells  
64 bit unique device identifier  
One Parameter Block Permanently  
Lockable  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Top Device Code, M28W160ECT: 88CEh  
Bottom Device Code, M28W160ECB:  
88CFh  
PACKAGES  
Compliant with Lead-Free Soldering  
Processes  
Lead-Free Versions  
November 2004  
1/50  

与M28W160ECB100ZB1S相关器件

型号 品牌 获取价格 描述 数据表
M28W160ECB100ZB1T STMICROELECTRONICS

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB1T NUMONYX

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB1U STMICROELECTRONICS

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB1U NUMONYX

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB6 NUMONYX

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB6E STMICROELECTRONICS

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB6E NUMONYX

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB6F STMICROELECTRONICS

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB6F NUMONYX

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB100ZB6S NUMONYX

获取价格

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory