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M28V410-120M1TR PDF预览

M28V410-120M1TR

更新时间: 2024-11-20 20:57:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
26页 1036K
描述
512KX8 FLASH 12V PROM, 120ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

M28V410-120M1TR 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:0.525 INCH, PLASTIC, SO-44针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
最长访问时间:120 ns其他特性:10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE
启动块:TOPJESD-30 代码:R-PDSO-G44
长度:28.2 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:44
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL编程电压:12 V
认证状态:Not Qualified座面最大高度:2.62 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

M28V410-120M1TR 数据手册

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512KX8 FLASH 12V PROM, 150ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56
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512KX8 FLASH 3V PROM, 120ns, PDSO56, TSOP-56
M28V411-120N1 STMICROELECTRONICS

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512KX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
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512KX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40