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M28V411-150N6 PDF预览

M28V411-150N6

更新时间: 2024-11-11 20:55:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 194K
描述
512KX8 FLASH 12V PROM, 150ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M28V411-150N6 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:10 X 20 MM, PLASTIC, TSOP-40针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.8
最长访问时间:150 ns其他特性:10K ERASE/PROGRAM CYCLES
启动块:TOPJESD-30 代码:R-PDSO-G40
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:40
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:12 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M28V411-150N6 数据手册

 浏览型号M28V411-150N6的Datasheet PDF文件第2页浏览型号M28V411-150N6的Datasheet PDF文件第3页浏览型号M28V411-150N6的Datasheet PDF文件第4页浏览型号M28V411-150N6的Datasheet PDF文件第5页浏览型号M28V411-150N6的Datasheet PDF文件第6页浏览型号M28V411-150N6的Datasheet PDF文件第7页 
M28V411  
M28V421  
LOW VOLTAGE  
4 Megabit (x 8, Block Erase) FLASH MEMORY  
PRELIMINARY DATA  
SMALL SIZE PLASTIC PACKAGETSOP40  
MEMORY ERASE in BLOCKS  
– One 16K Byte Boot Block (top or bottomlo-  
cation) with hardware write and erase pro-  
tection  
– Two 8K Byte Key Parameter Blocks  
– One 96K Byte Main Block  
– Three 128K Byte Main Blocks  
3.3V ± 0.3V SUPPLYVOLTAGE  
12V ± 5% PROGRAMMING VOLTAGE  
100,000 PROGRAM/ERASE CYCLES  
PROGRAM/ERASE CONTROLLER  
AUTOMATIC STATIC MODE  
TSOP40 (N)  
10 x 20mm  
LOW POWER CONSUMPTION  
– 55µA Typical in Standby  
Figure 1. Logic Diagram  
– 3µATypical in Deep Power Down  
– 10mA Typical Operating Consumption  
HIGH SPEED ACCESS TIME: 120ns  
EXTENDED TEMPERATURE RANGES  
V
V
PP  
CC  
DESCRIPTION  
The M28V411and M28V421FLASH MEMORIES  
are non-volatile memories that may be erased  
electrically at the block level and programmed by  
byte.  
19  
8
A0-A18  
DQ0-DQ7  
RP  
W
E
Table 1. Signal Names  
M28V411  
M28V421  
A0-A18  
DQ0-DQ7  
E
Address Inputs  
Data Input / Outputs  
Chip Enable  
G
G
Output Enable  
W
Write Enable  
V
SS  
RP  
Reset/Power Down/Boot Block Unlock  
Program Supply  
Supply Voltage  
AI01405  
VPP  
VCC  
VSS  
Ground  
October 1995  
1/25  
This is preliminary informationon a new product now in developmentor undergoingevaluation. Detailsare subject to change without notice.  

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