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M28V410N PDF预览

M28V410N

更新时间: 2024-11-11 20:08:51
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
2页 96K
描述
512KX8 FLASH 3V PROM, 120ns, PDSO56, TSOP-56

M28V410N 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP-56针数:56
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.69
最长访问时间:120 ns其他特性:CONFIGURABLE AS 256K X 16
启动块:TOPJESD-30 代码:R-PDSO-G56
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:56字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子位置:DUAL类型:NOR TYPE
Base Number Matches:1

M28V410N 数据手册

 浏览型号M28V410N的Datasheet PDF文件第2页 

与M28V410N相关器件

型号 品牌 获取价格 描述 数据表
M28V411-120N1 STMICROELECTRONICS

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512KX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-120N1TR STMICROELECTRONICS

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512KX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-120N3TR STMICROELECTRONICS

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512KX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-120N6TR STMICROELECTRONICS

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512KX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-150N3TR STMICROELECTRONICS

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512KX8 FLASH 12V PROM, 150ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-150N5 STMICROELECTRONICS

获取价格

512KX8 FLASH 12V PROM, 150ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-150N5TR STMICROELECTRONICS

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512KX8 FLASH 12V PROM, 150ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-150N6 STMICROELECTRONICS

获取价格

512KX8 FLASH 12V PROM, 150ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V411-150N6TR STMICROELECTRONICS

获取价格

512KX8 FLASH 12V PROM, 150ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V420-120M6TR STMICROELECTRONICS

获取价格

512KX8 FLASH 12V PROM, 120ns, PDSO44, 0.525 INCH, PLASTIC, SO-44