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M28256-15NS1 PDF预览

M28256-15NS1

更新时间: 2024-10-28 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
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21页 133K
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M28256-15NS1 数据手册

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M28256  
256 Kbit (32Kb x8) Parallel EEPROM  
with Software Data Protection  
PRELIMINARY DATA  
FASTACCESSTIME:  
– 90ns at 5V  
– 120ns at 3V  
SINGLE SUPPLY VOLTAGE:  
±
– 5V 10% for M28256  
28  
– 2.7V to 3.6V for M28256-xxW  
LOW POWER CONSUMPTION  
FAST WRITE CYCLE:  
1
PDIP28 (BS)  
PLCC32 (KA)  
– 64 Bytes Page Write Operation  
– Byte or Page Write Cycle  
ENHANCED END of WRITEDETECTION:  
– Data Polling  
28  
– Toggle Bit  
1
STATUS REGISTER  
HIGH RELIABILITYDOUBLE POLYSILICON,  
CMOS TECHNOLOGY:  
SO28 (MS)  
300 mils  
TSOP28 (NS)  
8 x13.4mm  
– Endurance >100,000 Erase/Write Cycles  
– Data Retention >10 Years  
JEDEC APPROVEDBYTEWIDE PIN OUT  
ADDRESS and DATA LATCHED ON-CHIP  
SOFTWARE DATA PROTECTION  
Figure 1. Logic Diagram  
V
CC  
DESCRIPTION  
The M28256and M28256-Ware 32K x8 low power  
ParallelEEPROMfabricatedwithSTMicroelectron-  
ics proprietary double polysilicon CMOS technol-  
ogy.  
15  
8
A0-A14  
DQ0-DQ7  
W
E
M28256  
Table 1. Signal Names  
A0-A14  
Address Input  
Data Input / Output  
Write Enable  
Chip Enable  
DQ0-DQ7  
G
W
E
V
SS  
G
Output Enable  
Supply Voltage  
Ground  
AI01885  
VCC  
VSS  
January 1999  
1/21  
This is preliminaryinformationon a new productnow in developmentor undergoingevaluation.Detail s aresubject to change without notice.  

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