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M28256-20MS6T PDF预览

M28256-20MS6T

更新时间: 2024-10-26 22:46:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 133K
描述
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

M28256-20MS6T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.300 INCH, PLASTIC, SO-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.83
Is Samacsys:N最长访问时间:200 ns
命令用户界面:NO数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:17.9 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:2.65 mm
最大待机电流:0.0001 A子类别:EEPROMs
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES宽度:7.5 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

M28256-20MS6T 数据手册

 浏览型号M28256-20MS6T的Datasheet PDF文件第2页浏览型号M28256-20MS6T的Datasheet PDF文件第3页浏览型号M28256-20MS6T的Datasheet PDF文件第4页浏览型号M28256-20MS6T的Datasheet PDF文件第5页浏览型号M28256-20MS6T的Datasheet PDF文件第6页浏览型号M28256-20MS6T的Datasheet PDF文件第7页 
M28256  
256 Kbit (32Kb x8) Parallel EEPROM  
with Software Data Protection  
PRELIMINARY DATA  
FASTACCESSTIME:  
– 90ns at 5V  
– 120ns at 3V  
SINGLE SUPPLY VOLTAGE:  
±
– 5V 10% for M28256  
28  
– 2.7V to 3.6V for M28256-xxW  
LOW POWER CONSUMPTION  
FAST WRITE CYCLE:  
1
PDIP28 (BS)  
PLCC32 (KA)  
– 64 Bytes Page Write Operation  
– Byte or Page Write Cycle  
ENHANCED END of WRITEDETECTION:  
– Data Polling  
28  
– Toggle Bit  
1
STATUS REGISTER  
HIGH RELIABILITYDOUBLE POLYSILICON,  
CMOS TECHNOLOGY:  
SO28 (MS)  
300 mils  
TSOP28 (NS)  
8 x13.4mm  
– Endurance >100,000 Erase/Write Cycles  
– Data Retention >10 Years  
JEDEC APPROVEDBYTEWIDE PIN OUT  
ADDRESS and DATA LATCHED ON-CHIP  
SOFTWARE DATA PROTECTION  
Figure 1. Logic Diagram  
V
CC  
DESCRIPTION  
The M28256and M28256-Ware 32K x8 low power  
ParallelEEPROMfabricatedwithSTMicroelectron-  
ics proprietary double polysilicon CMOS technol-  
ogy.  
15  
8
A0-A14  
DQ0-DQ7  
W
E
M28256  
Table 1. Signal Names  
A0-A14  
Address Input  
Data Input / Output  
Write Enable  
Chip Enable  
DQ0-DQ7  
G
W
E
V
SS  
G
Output Enable  
Supply Voltage  
Ground  
AI01885  
VCC  
VSS  
January 1999  
1/21  
This is preliminaryinformationon a new productnow in developmentor undergoingevaluation.Detail s aresubject to change without notice.  

M28256-20MS6T 替代型号

型号 品牌 替代类型 描述 数据表
HN58C256AFP-10E RENESAS

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HN58C256AFP-10 HITACHI

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