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M27V512-100B6TR PDF预览

M27V512-100B6TR

更新时间: 2024-10-28 22:23:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 110K
描述
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM

M27V512-100B6TR 数据手册

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M27V512  
512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM  
LOW VOLTAGE READ OPERATION:  
3V to 3.6V  
FAST ACCESS TIME: 100ns  
LOW POWER CONSUMPTION:  
28  
28  
– Active Current 10mA at 5MHz  
– Standby Current 10µA  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
FDIP28W (F)  
PDIP28 (B)  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 3Dh  
DESCRIPTION  
The M27V512 is a low voltage 512 Kbit EPROM  
offered in the two ranges UV (ultra viloet erase)  
and OTP (one time programmable). It is ideally  
suited for microprocessor systems and is orga-  
nized as 65,536 by 8 bits.  
PLCC32 (K)  
TSOP28 (N)  
8 x 13.4mm  
Figure 1. Logic Diagram  
The M27V512 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
V
CC  
The FDIP28W (window ceramic frit-seal package)  
has transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27V512 is offered in PDIP28, PLCC32 and  
TSOP28 (8 x 13.4 mm) packages.  
16  
8
A0-A15  
E
Q0-Q7  
M27V512  
GV  
PP  
Table 1. Signal Names  
A0-A15  
Q0-Q7  
E
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Supply Voltage  
Ground  
V
SS  
AI00732B  
GV  
PP  
V
CC  
V
SS  
May 1998  
1/16  

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