Datasheet > M27V512-100F1

M27V512-100F1

更新时间： 2024-10-30 04:57:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器
页数	文件大小	规格书
16页	163K
描述
64KX8 UVPROM, 100ns, CDIP28, CERAMIC, DIP-28

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数据手册

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M27V512-100F1 数据手册

M27V512

512 Kbit (64Kb x 8) Low Voltage UV EPROM and OTP EPROM

NOT FOR NEW DESIGN

■ M27V512 is replaced by the M27W512

■ 3V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME: 100ns

■ LOW POWER CONSUMPTION:

– Active Current 10mA at 5MHz

– Standby Current 10µA

FDIP28W (F)

PDIP28 (B)

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 3Dh

PLCC32 (K)

TSOP28 (N)

8 x 13.4 mm

DESCRIPTION

The M27V512 is a low voltage 512 Kbit EPROM

offered in the two ranges UV (ultra violet erase)

and OTP (one time programmable). It is ideally

suited for microprocessor systems and is orga-

nized as 65,536 by 8 bits.

Figure 1. Logic Diagram

The M27V512 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP28W (window ceramic frit-seal package)

has transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A15

Q0-Q7

For applications where the content is programmed

only one time and erasure is not required, the

M27V512 is offered in PDIP28, PLCC32 and

TSOP28 (8 x 13.4 mm) packages.

M27V512

AI00732B

July 2000

1/16

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...16

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M27V512-120B6TR	STMICROELECTRONICS	获取价格	512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM