M27V401-200B1TR

更新时间： 2024-10-27 22:55:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	105K
描述
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM

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中文翻译

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数据手册

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M27V401-200B1TR 数据手册

M27V401

4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM

■ LOW VOLTAGE READ OPERATION:

3V to 3.6V

■ FAST ACCESS TIME: 120ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/byte (typical)

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

FDIP32W (F)

PDIP32 (B)

– Device Code: 41h

DESCRIPTION

The M27V401 is a low voltage 4 Mbit EPROM of-

fered in the two range UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organised as 524,288 by 8

bits.

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

Figure 1. Logic Diagram

The M27V401 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP32W (window ceramic frit-seal package)

has a transparent lid which allow the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A18

Q0-Q7

Table 1. Signal Names

M27V401

A0-A18

Q0-Q7

Address Inputs

Data Outputs

Chip Enable

Output Enable

Program Supply

Supply Voltage

Ground

AI00695B

May 1998

1/15

12 3 4 5 6 7...15

中文翻译

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