Datasheet > M27V400-100B1TR

M27V400-100B1TR

更新时间： 2024-10-27 22:23:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
14页	119K
描述
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM

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数据手册

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M27V400-100B1TR 数据手册

M27V400

4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM

NOT FOR NEW DESIGN

■ M27V400 is replaced by the M27W400

■ 3V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME: 100ns

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

■ 4 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 30mA at 8MHz

– Stand-by Current 20µA

FDIP40W (F)

PDIP40 (B)

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

Figure 1. Logic Diagram

– Device Code: B8h

DESCRIPTION

The M27V400 is an 4 Mbit EPROM offered in the

two ranges UV (ultra violet erase) and OTP (one

time programmable). It is ideally suited for micro-

processor systems requiring large data or program

storage. It is organised as either 512 Kwords of 8

bit or 256 Kwords of 16 bit. The pin-out is compat-

ible with the most common 4 Mbit Mask ROM.

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern.

Q15A–1

A0-A17

Q0-Q14

M27C400

A new pattern can then be written rapidly to the de-

vice by following the programming procedure.

For applications where the content is programmed

only one time and erasure is not required, the

M27V400 is offered in PDIP40 package.

BYTEV

AI01634

July 2000

1/14

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...14

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