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M27V160-100XM1 PDF预览

M27V160-100XM1

更新时间: 2024-10-27 02:52:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
25页 239K
描述
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM

M27V160-100XM1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.525 INCH, ROHS COMPLIANT, PLASTIC, SOP-44
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.83Is Samacsys:N
最长访问时间:100 ns其他特性:CONFIGURABLE AS 1M X 16
备用内存宽度:8I/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:28.2 mm内存密度:16777216 bit
内存集成电路类型:OTP ROM内存宽度:16
功能数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP44,.63
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):250
电源:3.3 V认证状态:Not Qualified
座面最大高度:2.8 mm最大待机电流:0.00006 A
子类别:OTP ROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:13.3 mm
Base Number Matches:1

M27V160-100XM1 数据手册

 浏览型号M27V160-100XM1的Datasheet PDF文件第2页浏览型号M27V160-100XM1的Datasheet PDF文件第3页浏览型号M27V160-100XM1的Datasheet PDF文件第4页浏览型号M27V160-100XM1的Datasheet PDF文件第5页浏览型号M27V160-100XM1的Datasheet PDF文件第6页浏览型号M27V160-100XM1的Datasheet PDF文件第7页 
M27V160  
16 Mbit (2Mb x8 or 1Mb x16)  
Low Voltage UV EPROM and OTP EPROM  
Features  
3V to 3.6V Low Voltage in Read Operation  
Access Time: 100 ns  
42  
42  
Byte-wide or Word-wide Configurable  
16 Mbit Mask ROM Replacement  
1
1
FDIP42W (F)  
PDIP42 (B)  
Low Power Consumption  
– Active Current: 30 mA at 8 MHz  
– Standby Current: 60 µA  
Programming Voltage: 12.5V ± 0.25V  
Programming Time: 50 µs/word  
42  
1
Electronic Signature  
– Manufacturer Code: 20h  
– Device Code: B1h  
SDIP42 (S)  
ECOPACK® packages available  
44  
1
PLCC44 (K)  
SO44 (M)  
April 2006  
Rev 5  
1/25  
www.st.com  
1

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