Datasheet > 存储 > EPROM> M27V160-100XF6TR

M27V160-100XF6TR

更新时间： 2024-10-26 22:55:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	105K
描述
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

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M27V160-100XF6TR 数据手册

M27V160

16 Mbit (2Mb x8 or 1Mb x16)

Low Voltage UV EPROM and OTP EPROM

■ 3V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME: 100ns

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

■ 16 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 30mA at 8MHz

– Standby Current 60µA

FDIP42W (F)

SO44 (M)

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: B1h

PDIP42 (B)

DESCRIPTION

The M27V160 is a low voltage 16 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage. It is organised as either 2 Mbit

words of 8 bit or 1 Mbit words of 16 bit. The pin-out

is compatible with a 16 Mbit Mask ROM.

The M27V160 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

Figure 1. Logic Diagram

Q15A–1

A0-A19

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written rapidly to

the device by following the programming proce-

dure.

For applications where the content is programmed

only one time and erasure is not required, the

M27V160 is offered in PDIP42 and SO44 packag-

es.

Q0-Q14

M27V160

BYTEV

AI01898

March 2000

1/15

12 3 4 5 6 7...15

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