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M27C801-45N1XTR PDF预览

M27C801-45N1XTR

更新时间: 2024-10-26 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 155K
描述
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M27C801-45N1XTR 数据手册

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M27C801  
8 Mbit (1Mb x 8) UV EPROM and OTP EPROM  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME: 45ns  
32  
LOW POWER CONSUMPTION:  
– Active Current 35mA at 5MHz  
– Standby Current 100µA  
32  
1
1
FDIP32W (F)  
PDIP32 (B)  
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 50µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 42h  
TSOP32 (N)  
8 x 20 mm  
PLCC32 (K)  
DESCRIPTION  
The M27C801 is an 8 Mbit EPROM offered in the  
two ranges UV (ultra violet erase) and OTP (one  
time programmable). It is ideally suited for applica-  
tions where fast turn-around and pattern experi-  
mentation are important requirements and is  
organized as 1,048,576 by 8 bits.  
Figure 1. Logic Diagram  
The FDIP32W (window ceramic frit-seal package)  
has transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
V
CC  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27C801 is offered in PDIP32, PLCC32 and  
TSOP32 (8 x 20 mm) packages.  
20  
8
A0-A19  
Q0-Q7  
E
M27C801  
GV  
PP  
V
SS  
AI01267  
September 2000  
1/16  

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