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M27C512-20N3XTR PDF预览

M27C512-20N3XTR

更新时间: 2024-11-28 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
22页 399K
描述
IC,EPROM,64KX8,CMOS,TSSOP,28PIN,PLASTIC

M27C512-20N3XTR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.92
最长访问时间:200 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
内存密度:524288 bit内存宽度:8
端子数量:28字数:65536 words
字数代码:64000最高工作温度:125 °C
最低工作温度:-40 °C组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:5 V最大待机电流:0.0001 A
子类别:OTP ROMs最大压摆率:0.03 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
Base Number Matches:1

M27C512-20N3XTR 数据手册

 浏览型号M27C512-20N3XTR的Datasheet PDF文件第2页浏览型号M27C512-20N3XTR的Datasheet PDF文件第3页浏览型号M27C512-20N3XTR的Datasheet PDF文件第4页浏览型号M27C512-20N3XTR的Datasheet PDF文件第5页浏览型号M27C512-20N3XTR的Datasheet PDF文件第6页浏览型号M27C512-20N3XTR的Datasheet PDF文件第7页 
M27C512  
512 Kbit (64K x8) UV EPROM and OTP EPROM  
FEATURES SUMMARY  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
Figure 1. Packages  
ACCESS TIME: 45ns  
LOW POWER “CMOS” CONSUMPTION:  
Active Current 30mA  
Standby Current 100µA  
28  
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIMES of AROUND 6sec.  
ELECTRONIC SIGNATURE  
1
FDIP28W (F)  
Manufacturer Code: 20h  
Device Code: 3Dh  
PACKAGES  
Lead-Free Versions  
28  
1
PDIP28 (B)  
PLCC32 (C)  
TSOP28 (N)  
8 x 13.4 mm  
November 2004  
1/22  

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