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M27C256B-80XB6X PDF预览

M27C256B-80XB6X

更新时间: 2024-01-03 03:03:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 149K
描述
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM

M27C256B-80XB6X 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.600 INCH, PLASTIC, DIP-28
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.82最长访问时间:80 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T28
JESD-609代码:e3长度:37.085 mm
内存密度:262144 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:12.75 V认证状态:Not Qualified
座面最大高度:5.08 mm最大待机电流:0.0001 A
子类别:OTP ROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

M27C256B-80XB6X 数据手册

 浏览型号M27C256B-80XB6X的Datasheet PDF文件第1页浏览型号M27C256B-80XB6X的Datasheet PDF文件第2页浏览型号M27C256B-80XB6X的Datasheet PDF文件第3页浏览型号M27C256B-80XB6X的Datasheet PDF文件第5页浏览型号M27C256B-80XB6X的Datasheet PDF文件第6页浏览型号M27C256B-80XB6X的Datasheet PDF文件第7页 
M27C256B  
Table 5. AC Measurement Conditions  
High Speed  
10ns  
Standard  
20ns  
Input Rise and Fall Times  
Input Pulse Voltages  
0 to 3V  
1.5V  
0.4V to 2.4V  
0.8V and 2V  
Input and Output Timing Ref. Voltages  
Figure 3. AC Testing Input Output Waveform  
Figure 4. AC Testing Load Circuit  
1.3V  
High Speed  
1N914  
3V  
1.5V  
3.3k  
0V  
DEVICE  
UNDER  
TEST  
OUT  
Standard  
C
L
2.4V  
2.0V  
0.8V  
0.4V  
C
C
C
= 30pF for High Speed  
= 100pF for Standard  
includes JIG capacitance  
L
L
L
AI01822  
AI01823B  
(1)  
Table 6. Capacitance  
Symbol  
(T = 25 °C, f = 1 MHz)  
A
Parameter  
Test Condition  
Min  
Max  
6
Unit  
pF  
C
V
= 0V  
= 0V  
Input Capacitance  
Output Capacitance  
IN  
IN  
C
OUT  
V
OUT  
12  
pF  
Note: 1. Sampled only, not 100% tested.  
DEVICE OPERATION  
dresses are stable, the address access time  
(t  
) is equal to the delay from E to output  
). Data is available at the output after delay  
AVQV  
The operating modes of the M27C256B are listed  
in the Operating Modes. A single power supply is  
required in the read mode. All inputs are TTL lev-  
(t  
ELQV  
of t  
from the falling edge of G, assuming that  
GLQV  
E has been low and the addresses have been sta-  
els except for V and 12V on A9 for Electronic  
PP  
ble for at least t  
-t  
.
AVQV GLQV  
Signature.  
Standby Mode  
Read Mode  
The M27C256B has a standby mode which reduc-  
es the supply current from 30mA to 100µA. The  
M27C256B is placed in the standby mode by ap-  
plying a CMOS high signal to the E input. When in  
the standby mode, the outputs are in a high imped-  
ance state, independent of the G input.  
The M27C256B has two control functions, both of  
which must be logically active in order to obtain  
data at the outputs. Chip Enable (E) is the power  
control and should be used for device selection.  
Output Enable (G) is the output control and should  
be used to gate data to the output pins, indepen-  
dent of device selection. Assuming that the ad-  
4/16  

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