Datasheet > M27C160-50B1TR

M27C160-50B1TR

更新时间： 2024-10-28 00:01:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
20页	147K
描述
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM

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数据手册

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M27C160-50B1TR 数据手册

M27C160

16 Mbit (2Mb x 8 or 1Mb x 16) UV EPROM and OTP EPROM

■ 5V ± 10% SUPPLY VOLTAGE in READ

OPERATION

■ ACCESS TIME: 50ns

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

■ 16 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 70mA at 8MHz

– Standby Current 100µA

FDIP42W (F)

PDIP42 (B)

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

SDIP42 (S)

– Device Code: B1h

DESCRIPTION

The M27C160 is a 16 Mbit EPROM offered in the

two ranges UV (ultra violet erase) and OTP (one

time programmable). It is ideally suited for micro-

processor systems requiring large data or program

storage and is organised as either 2 Mbit words of

8 bit or 1 Mbit words of 16 bit. The pin-out is com-

patible with a 16 Mbit Mask ROM.

PLCC44 (K)

SO44 (M)

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written rapidly to

the device by following the programming proce-

dure.

Figure 1. Logic Diagram

Q15A–1

For applications where the content is programmed

only one time and erasure is not required, the

M27C160 is offered in PDIP42, SDIP42, PLCC44

and SO44 packages.

A0-A19

Q0-Q14

M27C160

BYTEV

AI00739B

January 2002

1/19

12 3 4 5 6 7...20

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