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M27C160-50B6TR PDF预览

M27C160-50B6TR

更新时间: 2024-10-28 00:01:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
20页 147K
描述
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM

M27C160-50B6TR 数据手册

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M27C160  
16 Mbit (2Mb x 8 or 1Mb x 16) UV EPROM and OTP EPROM  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME: 50ns  
BYTE-WIDE or WORD-WIDE  
42  
42  
CONFIGURABLE  
1
1
16 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 70mA at 8MHz  
– Standby Current 100µA  
FDIP42W (F)  
PDIP42 (B)  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 50µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
42  
1
SDIP42 (S)  
– Device Code: B1h  
DESCRIPTION  
44  
The M27C160 is a 16 Mbit EPROM offered in the  
two ranges UV (ultra violet erase) and OTP (one  
time programmable). It is ideally suited for micro-  
processor systems requiring large data or program  
storage and is organised as either 2 Mbit words of  
8 bit or 1 Mbit words of 16 bit. The pin-out is com-  
patible with a 16 Mbit Mask ROM.  
1
PLCC44 (K)  
SO44 (M)  
The FDIP42W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written rapidly to  
the device by following the programming proce-  
dure.  
Figure 1. Logic Diagram  
V
CC  
20  
Q15A–1  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27C160 is offered in PDIP42, SDIP42, PLCC44  
and SO44 packages.  
A0-A19  
15  
Q0-Q14  
E
M27C160  
G
BYTEV  
PP  
V
SS  
AI00739B  
January 2002  
1/19  

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