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M27512-3F1 PDF预览

M27512-3F1

更新时间: 2024-11-13 22:46:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
11页 92K
描述
NMOS 512K 64K x 8 UV EPROM

M27512-3F1 数据手册

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M27512  
NMOS 512 Kbit (64Kb x 8) UV EPROM  
NOT FOR NEW DESIGN  
FAST ACCESS TIME: 200ns  
EXTENDED TEMPERATURE RANGE  
SINGLE 5V SUPPLY VOLTAGE  
LOW STANDBY CURRENT: 40mA max  
TTL COMPATIBLE DURING READ and  
PROGRAM  
28  
FAST PROGRAMMING ALGORITHM  
ELECTRONIC SIGNATURE  
1
PROGRAMMING VOLTAGE: 12V  
FDIP28W (F)  
DESCRIPTION  
The M27512 is a 524,288 bit UV erasable and  
electrically programmable memory EPROM. It is  
organized as 65,536 words by 8 bits.  
The M27512 is housed in a 28 Pin Window Ce-  
ramic Frit-Seal Dual-in-Line package. The trans-  
parent lid allows the user to expose the chip to  
ultraviolet light to erase the bit pattern. A new pat-  
tern can then be written to the device by following  
the programming procedure.  
Figure 1. Logic Diagram  
V
CC  
16  
8
A0-A15  
E
Q0-Q7  
M27512  
GV  
PP  
V
SS  
AI00765B  
November 2000  
1/11  
This is information on a product still in production but not recommended for new designs.  

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