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M27512F6 PDF预览

M27512F6

更新时间: 2024-09-26 14:52:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器内存集成电路
页数 文件大小 规格书
11页 88K
描述
64KX8 UVPROM, 250ns, CDIP28, WINDOWED, FRIT SEALED, CERAMIC, DIP-28

M27512F6 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DIP包装说明:WINDOWED, FRIT SEALED, CERAMIC, DIP-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.61
风险等级:5.47Is Samacsys:N
最长访问时间:250 nsI/O 类型:COMMON
JESD-30 代码:R-GDIP-T28JESD-609代码:e0
内存密度:524288 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:28字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8输出特性:3-STATE
封装主体材料:CERAMIC, GLASS-SEALED封装代码:WDIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:5.71 mm
子类别:EPROMs最大压摆率:0.125 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:NMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

M27512F6 数据手册

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M27512  
NMOS 512 Kbit (64Kb x 8) UV EPROM  
NOT FOR NEW DESIGN  
FAST ACCESS TIME: 200ns  
EXTENDED TEMPERATURE RANGE  
SINGLE 5V SUPPLY VOLTAGE  
LOW STANDBY CURRENT: 40mA max  
TTL COMPATIBLE DURING READ and  
PROGRAM  
28  
FAST PROGRAMMING ALGORITHM  
ELECTRONIC SIGNATURE  
1
PROGRAMMING VOLTAGE: 12V  
FDIP28W (F)  
DESCRIPTION  
The M27512 is a 524,288 bit UV erasable and  
electrically programmable memory EPROM. It is  
organized as 65,536 words by 8 bits.  
The M27512 is housed in a 28 Pin Window Ce-  
ramic Frit-Seal Dual-in-Line package. The trans-  
parent lid allows the user to expose the chip to  
ultraviolet light to erase the bit pattern. A new pat-  
tern can then be written to the device by following  
the programming procedure.  
Figure 1. Logic Diagram  
V
CC  
16  
8
A0-A15  
E
Q0-Q7  
M27512  
GV  
PP  
V
SS  
AI00765B  
November 2000  
1/11  
This is information on a product still in production but not recommended for new designs.  

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