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M25PE80-VMP6T PDF预览

M25PE80-VMP6T

更新时间: 2024-11-26 22:55:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路时钟
页数 文件大小 规格书
43页 602K
描述
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out

M25PE80-VMP6T 数据手册

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M25PE80  
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with  
Byte-Alterability, 50MHz SPI Bus, Standard Pin-out  
PRELIMINARY DATA  
FEATURES SUMMARY  
Industrial Standard SPI Pin-out  
8 Mbits of Page-Erasable Flash Memory  
Page Write (up to 256 Bytes) in 11ms (typical)  
Page Program (up to 256 Bytes) in 1.2ms  
(typical)  
Figure 1. Packages  
Page Erase (256 Bytes) in 10ms (typical)  
Sector Erase (512 Kbits)  
Bulk Erase (8 Mbits)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
50MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature  
VDFPN8 (MP)  
6 x 5mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(8014h)  
More than 100,000 Write Cycles  
More than 20 Year Data Retention  
Hardware Write Protection of the Top Sector  
(64KB)  
8
1
Software Write Protection on a 64KByte  
Sector Basis  
Software Write Protection on a 4KByte Sub-  
sector Basis for Sector 0 and Sector 15  
SO8W (MW)  
208 mils width  
August 2005  
1/43  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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