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M25PE80-VMW6G PDF预览

M25PE80-VMW6G

更新时间: 2024-11-27 04:43:31
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
66页 1387K
描述
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

M25PE80-VMW6G 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.53Is Samacsys:N
最大时钟频率 (fCLK):50 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3/e4长度:5.62 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):250电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.5 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN/NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:5.59 mm
最长写入周期时间 (tWC):23 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25PE80-VMW6G 数据手册

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M25PE80  
8-Mbit, page-erasable serial flash memory with  
byte alterability, 75 MHz SPI bus, standard pinout  
Features  
SPI bus compatible serial interface  
8-Mbit page-erasable flash memory  
Page size: 256 bytes  
– Page write in 11 ms (typical)  
– Page program in 0.8 ms (typical)  
– Page erase in 10 ms (typical)  
VFQFPN8 (MP)  
6 x 5 mm (MLP8)  
Subsector erase (4 Kbytes)  
Sector erase (64 Kbytes)  
Bulk erase (8 Mbits)  
2.7 V to 3.6 V single supply voltage  
75 MHz clock rate (maximum)  
Deep power-down mode 1 µA (typical)  
Electronic signature  
QFN8L (MS)  
6 x 5 mm (MLP8)  
– JEDEC standard two-byte signature  
(8014h)  
– Unique ID code (UID) with 16 bytes read-  
only, available upon customer request only  
in the T9HX process  
Software write protection on a 64-Kbyte sector  
basis  
SO8W (MW)  
208 mils width  
Hardware write protection of the memory area  
selected using the BP0, BP1 and BP2 bits  
More than 100 000 write cycles  
More than 20 years data retention  
Packages  
– ECOPACK® (RoHS compliant)  
SO8N (MN)  
150 mils width  
April 2008  
Rev 7  
1/66  
www.numonyx.com  
1

M25PE80-VMW6G 替代型号

型号 品牌 替代类型 描述 数据表
CAT24C512WI-GT3 ONSEMI

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512 kb I2C CMOS Serial EEPROM 128?Byte Page Write Buffer

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