5秒后页面跳转
M25PE80-VMW6TG PDF预览

M25PE80-VMW6TG

更新时间: 2024-11-27 04:43:31
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
66页 1387K
描述
8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout

M25PE80-VMW6TG 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.52Is Samacsys:N
最大时钟频率 (fCLK):50 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3/e4长度:5.62 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:2.5 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:5.59 mm
最长写入周期时间 (tWC):23 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25PE80-VMW6TG 数据手册

 浏览型号M25PE80-VMW6TG的Datasheet PDF文件第2页浏览型号M25PE80-VMW6TG的Datasheet PDF文件第3页浏览型号M25PE80-VMW6TG的Datasheet PDF文件第4页浏览型号M25PE80-VMW6TG的Datasheet PDF文件第5页浏览型号M25PE80-VMW6TG的Datasheet PDF文件第6页浏览型号M25PE80-VMW6TG的Datasheet PDF文件第7页 
M25PE80  
8-Mbit, page-erasable serial flash memory with  
byte alterability, 75 MHz SPI bus, standard pinout  
Features  
SPI bus compatible serial interface  
8-Mbit page-erasable flash memory  
Page size: 256 bytes  
– Page write in 11 ms (typical)  
– Page program in 0.8 ms (typical)  
– Page erase in 10 ms (typical)  
VFQFPN8 (MP)  
6 x 5 mm (MLP8)  
Subsector erase (4 Kbytes)  
Sector erase (64 Kbytes)  
Bulk erase (8 Mbits)  
2.7 V to 3.6 V single supply voltage  
75 MHz clock rate (maximum)  
Deep power-down mode 1 µA (typical)  
Electronic signature  
QFN8L (MS)  
6 x 5 mm (MLP8)  
– JEDEC standard two-byte signature  
(8014h)  
– Unique ID code (UID) with 16 bytes read-  
only, available upon customer request only  
in the T9HX process  
Software write protection on a 64-Kbyte sector  
basis  
SO8W (MW)  
208 mils width  
Hardware write protection of the memory area  
selected using the BP0, BP1 and BP2 bits  
More than 100 000 write cycles  
More than 20 years data retention  
Packages  
– ECOPACK® (RoHS compliant)  
SO8N (MN)  
150 mils width  
April 2008  
Rev 7  
1/66  
www.numonyx.com  
1

M25PE80-VMW6TG 替代型号

型号 品牌 替代类型 描述 数据表
M25PE80-VMW6TG MICRON

功能相似

8Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher
M25P10-AVMN6P STMICROELECTRONICS

功能相似

512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interf

与M25PE80-VMW6TG相关器件

型号 品牌 获取价格 描述 数据表
M25PE80-VMW6TP NUMONYX

获取价格

8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard
M25PE80-VMW6TP STMICROELECTRONICS

获取价格

8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI B
M25PX16 MICRON

获取价格

16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interf
M25PX16SOVZM6TP MICRON

获取价格

16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interf
M25PX16STVMN3P NUMONYX

获取价格

EEPROM, 2MX8, Serial, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
M25PX16STVMW6P NUMONYX

获取价格

EEPROM, 2MX8, Serial, CMOS, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
M25PX16STVZM6TP MICRON

获取价格

16Mb, Dual I/O, 4KB Subsector Erase, Serial NOR Flash Memory with 75 MHz Serial Peripheral
M25PX16SVMN3G NUMONYX

获取价格

Flash, 2MX8, PDSO8
M25PX16SVMN3P NUMONYX

获取价格

EEPROM, 2MX8, Serial, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
M25PX16SVMN3TG NUMONYX

获取价格

EEPROM, 2MX8, Serial, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8