Datasheet > M25P16-VMW3TG

M25P16-VMW3TG

更新时间： 2024-11-30 03:19:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
55页	488K
描述
16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface

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数据手册

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M25P16-VMW3TG 数据手册

M25P16

16 Mbit, low voltage, Serial Flash memory

with 50 MHz SPI bus interface

Features

■ 16 Mbit of Flash memory

■ Page Program (up to 256 Bytes) in 0.64ms

(typical)

SO8N (MN)

150 mils width

■ Sector Erase (512 Kbit) in 0.6s (typical)

■ Bulk Erase (16 Mbit) in 13s (typical)

■ 2.7 V to 3.6 VV Single Supply Voltage

■ SPI Bus Compatible Serial Interface

■ 50 MHz Clock Rate (maximum)

■ Deep Power-down Mode 1µA (typical)

■ Electronic Signatures

SO8W (MW)

208 mils width

– JEDEC standard two-byte signature

(2015h)

– RES instruction, one-byte, signature (14h),

for backward compatibility

■ More than 100 000 Erase/Program cycles per

Sector

■ Hardware Write Protection: protected area size

defined by three non-volatile bits (BP0, BP1

and BP2)

SO16 (MF)

300 mils width

■ More than 20 year data retention

■ Packages

– ECOPACK® (RoHS compliant)

VFQFPN8 (MP)

6 × 5 mm (MLP8)

VDFPN8 (ME)

8x6mm (MLP8)

January 2007

Rev 10

1/55

www.st.com

12 3 4 5 6 7...55

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