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M25P20SVMN3GB PDF预览

M25P20SVMN3GB

更新时间: 2024-11-30 19:57:39
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
55页 1120K
描述
Flash, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8

M25P20SVMN3GB 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8针数:8
Reach Compliance Code:unknown风险等级:5.26
JESD-30 代码:R-PDSO-G8内存集成电路类型:FLASH
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
编程电压:2.7 V认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

M25P20SVMN3GB 数据手册

 浏览型号M25P20SVMN3GB的Datasheet PDF文件第2页浏览型号M25P20SVMN3GB的Datasheet PDF文件第3页浏览型号M25P20SVMN3GB的Datasheet PDF文件第4页浏览型号M25P20SVMN3GB的Datasheet PDF文件第5页浏览型号M25P20SVMN3GB的Datasheet PDF文件第6页浏览型号M25P20SVMN3GB的Datasheet PDF文件第7页 
M25P20  
2 Mbit, low voltage, Serial Flash memory  
with 75 MHz SPI bus interface  
Feature summary  
„
„
2 Mbit of Flash Memory  
Page Program (up to 256 Bytes) in 0.8 ms  
(typical)  
„
„
„
„
„
„
„
Sector Erase (512 Kbit) in 0.6 s (typical)  
Bulk Erase (2 Mbit) in 3 s (typical)  
2.3 to 3.6 V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
75 MHz Clock Rate (maximum)  
SO8 (MN)  
150 mils width  
Deep Power-down Mode 1 μA (typical)  
Hardware Write Protection: protected area  
size defined by two non-volatile bits (BP0,  
BP1)  
QFN8L (MS)  
MLP8 6 x 5 mm  
„
Electronic Signatures  
– JEDEC Standard two-Byte Signature  
(2012h)  
– Unique ID code (UID) with 16 bytes read-  
only, available upon customer request  
– RES Instruction, One-Byte, Signature  
(11h), for backward compatibility  
VFQFPN8 (MP)  
(MLP8 6 x 5 mm)  
„
Packages  
– ECOPACK® (RoHS compliant)  
October 2008  
Rev 12  
1/55  
www.Numonyx.com  
1

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