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M24LR64-RMN6T2 PDF预览

M24LR64-RMN6T2

更新时间: 2024-11-14 11:18:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
128页 1050K
描述
64 Kbit EEPROM with password protection & dual interface

M24LR64-RMN6T2 数据手册

 浏览型号M24LR64-RMN6T2的Datasheet PDF文件第2页浏览型号M24LR64-RMN6T2的Datasheet PDF文件第3页浏览型号M24LR64-RMN6T2的Datasheet PDF文件第4页浏览型号M24LR64-RMN6T2的Datasheet PDF文件第5页浏览型号M24LR64-RMN6T2的Datasheet PDF文件第6页浏览型号M24LR64-RMN6T2的Datasheet PDF文件第7页 
M24LR64-R  
64 Kbit EEPROM with password protection & dual interface:  
400 kHz I²C serial bus & ISO 15693 RF protocol at 13.56 MHz  
Features  
I2C interface  
2
Two-wire I C serial interface supports 400 kHz  
protocol  
Single supply voltage:  
SO8 (MN)  
150 mils width  
– 1.8 V to 5.5 V  
Byte and Page Write (up to 4 bytes)  
Random and Sequential Read modes  
Self-timed programming cycle  
Automatic address incrementing  
Enhanced ESD/latch-up protection  
UFDFPN8 (MB)  
2 × 3 mm  
Contactless interface  
ISO 15693 and ISO 18000-3 mode 1 compliant  
13.56 MHz 7k Hz carrier frequency  
To tag: 10% or 100% ASK modulation using  
1/4 (26 Kbit/s) or 1/256 (1.6 Kbit/s) pulse  
position coding  
TSSOP8 (DW)  
From tag: load modulation using Manchester  
coding with 423 kHz and 484 kHz subcarriers  
in low (6.6 kbit/s) or high (26 kbit/s) data rate  
mode. Supports the 53 kbit/s data rate with  
Fast commands  
Internal tuning capacitance: 27.5 pF  
64-bit unique identifier (UID)  
Read Block & Write (32-bit Blocks)  
Memory  
Sawn wafer on UV tape  
64 Kbit EEPROM organized into:  
2
– 8192 bytes in I C mode  
– 2048 blocks of 32 bits in RF mode  
Multiple password protection in RF mode  
2
Single password protection in I C mode  
Write time  
2
More than 40-year data retention  
– I C: 5 ms (Max.)  
Package  
– RF: 5.75 ms including the internal Verify  
time  
®
– ECOPACK2 (RoHS compliant and  
Halogen-free)  
More than 1 Million write cycles  
June 2010  
Doc ID 15170 Rev 10  
1/128  
www.st.com  
1

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