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M24M01-DFDW6TP PDF预览

M24M01-DFDW6TP

更新时间: 2024-11-15 17:33:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
30页 288K
描述
1 Mbit串行I2C总线EEPROM

M24M01-DFDW6TP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:13 weeks
风险等级:1.7最大时钟频率 (fCLK):1 MHz
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.4 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.2 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

M24M01-DFDW6TP 数据手册

 浏览型号M24M01-DFDW6TP的Datasheet PDF文件第2页浏览型号M24M01-DFDW6TP的Datasheet PDF文件第3页浏览型号M24M01-DFDW6TP的Datasheet PDF文件第4页浏览型号M24M01-DFDW6TP的Datasheet PDF文件第5页浏览型号M24M01-DFDW6TP的Datasheet PDF文件第6页浏览型号M24M01-DFDW6TP的Datasheet PDF文件第7页 
M24M01-R  
1 Mbit serial I²C bus EEPROM  
Features  
2
Compatible with I C extended addressing  
2
Two-wire I C serial interface  
supports 1 MHz protocol  
Single supply voltage:  
– 1.8 V to 5.5 V  
SO8 (MN)  
150 mils width  
Hardware write control  
Byte and Page Write (up to 256 bytes)  
Random and Sequential Read modes  
Self-timed programming cycle  
Automatic address incrementing  
Enhanced ESD/Latch-Up protection  
More than 1 million Write cycles  
More than 40-year data retention  
SO8 (MW)  
208 mils width  
Packages  
– ECOPACK® (RoHS compliant)  
November 2007  
Rev 3  
1/30  
www.st.com  
1

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